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Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide
  • Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
  • Publisher :Unknown
  • Release Date :2019-03-27
  • Total pages :570
  • ISBN : 9780081024317
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Summary : Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Negative Capacitance in Ferroelectric Materials

Negative Capacitance in Ferroelectric Materials
  • Author : Michael Hoffmann
  • Publisher :Unknown
  • Release Date :2020-09-15
  • Total pages :170
  • ISBN : 9783751999366
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Summary : This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films
  • Author : Ekaterina Yurchuk
  • Publisher :Unknown
  • Release Date :2015-06-30
  • Total pages :238
  • ISBN : 9783832540036
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Summary : Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Ferroelectric Memories

Ferroelectric Memories
  • Author : James F. Scott
  • Publisher :Unknown
  • Release Date :2013-06-29
  • Total pages :248
  • ISBN : 9783662043073
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Summary : This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.

Ferroelectric-Gate Field Effect Transistor Memories

Ferroelectric-Gate Field Effect Transistor Memories
  • Author : Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
  • Publisher :Unknown
  • Release Date :2020-03-23
  • Total pages :425
  • ISBN : 9789811512124
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Summary : This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Ferroelectric Thin Films

Ferroelectric Thin Films
  • Author : Masanori Okuyama
  • Publisher :Unknown
  • Release Date :2005-02-22
  • Total pages :244
  • ISBN : 3540241639
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Summary : Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Magnetic, Ferroelectric, and Multiferroic Metal Oxides

Magnetic, Ferroelectric, and Multiferroic Metal Oxides
  • Author : Biljana Stojanovic
  • Publisher :Unknown
  • Release Date :2018-01-02
  • Total pages :658
  • ISBN : 9780128111819
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Summary : Magnetic, Ferroelectric, and Multiferroic Metal Oxides covers the fundamental and theoretical aspects of ferroics and magnetoelectrics, their properties, and important technological applications, serving as the most comprehensive, up-to-date reference on the subject. Organized in four parts, Dr. Biljana Stojanovic leads expert contributors in providing the context to understand the material (Part I: Introduction), the theoretical and practical aspects of ferroelectrics (Part II: Ferroelectrics: From Theory, Structure and Preparation to Application), magnetic metal oxides (Part III: Magnetic Oxides: Ferromagnetics, Antiferromagnetics and Ferrimagnetics), multiferroics (Part IV: Multiferroic Metal Oxides) and future directions in research and application (Part V: Future of Metal Oxide Ferroics and Multiferroics). As ferroelectric materials are used to make capacitors with high dielectric constant, transducers, and actuators, and in sensors, reed heads, and memories based on giant magnetoresistive effects, this book will provide an ideal source for the most updated information. Addresses ferroelectrics, ferromagnetics and multiferroelectrics, providing a one-stop reference for researchers Provides fundamental theory and relevant, important technological applications Highlights their use in capacitors with high dielectric constant, transducers, and actuators, and in sensors, reed heads, and memories based on giant magnetoresistive effects

Perovskite Oxide for Solid Oxide Fuel Cells

Perovskite Oxide for Solid Oxide Fuel Cells
  • Author : Tatsumi Ishihara
  • Publisher :Unknown
  • Release Date :2009-06-12
  • Total pages :302
  • ISBN : 0387777083
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Summary : Fuel cell technology is quite promising for conversion of chemical energy of hydrocarbon fuels into electricity without forming air pollutants. There are several types of fuel cells: polymer electrolyte fuel cell (PEFC), phosphoric acid fuel cell (PAFC), molten carbonate fuel cell (MCFC), solid oxide fuel cell (SOFC), and alkaline fuel cell (AFC). Among these, SOFCs are the most efficient and have various advantages such as flexibility in fuel, high reliability, simple balance of plant (BOP), and a long history. Therefore, SOFC technology is attracting much attention as a power plant and is now close to marketing as a combined heat and power generation system. From the beginning of SOFC development, many perovskite oxides have been used for SOFC components; for example, LaMnO -based oxide for the cathode and 3 LaCrO for the interconnect are the most well known materials for SOFCs. The 3 current SOFCs operate at temperatures higher than 1073 K. However, lowering the operating temperature of SOFCs is an important goal for further SOFC development. Reliability, durability, and stability of the SOFCs could be greatly improved by decreasing their operating temperature. In addition, a lower operating temperature is also beneficial for shortening the startup time and decreasing energy loss from heat radiation. For this purpose, faster oxide ion conductors are required to replace the conventional Y O -stabilized ZrO 2 3 2 electrolyte. A new class of electrolytes such as LaGaO is considered to be 3 highly useful for intermediate-temperature SOFCs.

Integration of 2D Materials for Electronics Applications

Integration of 2D Materials for Electronics Applications
  • Author : Filippo Giannazzo,Samuel Lara Avila,Jens Eriksson,Sushant Sonde
  • Publisher :Unknown
  • Release Date :2019-02-13
  • Total pages :264
  • ISBN : 9783038976066
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Summary : This book is a printed edition of the Special Issue "Integration of 2D Materials for Electronics Applications" that was published in Crystals

Ferroelectric Random Access Memories

Ferroelectric Random Access Memories
  • Author : Hiroshi Ishiwara,Masanori Okuyama,Yoshihiro Arimoto
  • Publisher :Unknown
  • Release Date :2004-04-16
  • Total pages :290
  • ISBN : 3540407189
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Summary : The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.

Atomic Layer Deposition for Semiconductors

Atomic Layer Deposition for Semiconductors
  • Author : Cheol Seong Hwang
  • Publisher :Unknown
  • Release Date :2013-10-18
  • Total pages :263
  • ISBN : 9781461480549
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Summary : Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
  • Author : Yoshio Nishi
  • Publisher :Unknown
  • Release Date :2014-06-24
  • Total pages :532
  • ISBN : 9780857098092
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Summary : New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Recent Advances in Porous Ceramics

Recent Advances in Porous Ceramics
  • Author : Uday M. Basheer Al-Naib
  • Publisher :Unknown
  • Release Date :2018-09-19
  • Total pages :230
  • ISBN : 9781789236521
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Summary : Porous ceramics have recently gained growing importance in industry because of their many applications like filters, absorbers, dust collectors, thermal insulation, hot gas collectors, dielectric resonators, bioreactors, bone replacement and automobile engine components. Generally, porous ceramics have good properties such as mechanical strength, abrasion resistance, and chemical and thermal stability. These porous network ceramic structures also have relatively low density, low mass and low thermal conductivity. Furthermore, permeability is one of the most important properties of porous ceramics for different applications such as membranes because this property directly relates to the pressure drop during filtration. Pore size control is one key factor in fabrication of porous ceramics. The size of particles and their distribution of the raw materials, manufacturing techniques, types of binder used, distribution of binder, and sintering affect the final porosity and pore connectivity, are important things that must be considered during the manufacturing of a porous ceramic body. Therefore, the development of porous ceramic research requires sufficient mechanical and chemical stability as well as permeability. This book covers a wide range of topics such as porous ceramic structure and properties, preparation, simulation and fabrication, sintering, applications for bioceramics, sensors, magnetics and energy saving.

Gallium Oxide

Gallium Oxide
  • Author : Masataka Higashiwaki,Shizuo Fujita
  • Publisher :Unknown
  • Release Date :2020-04-23
  • Total pages :764
  • ISBN : 9783030371531
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Summary : This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

Electroceramics

Electroceramics
  • Author : A. J. Moulson,J. M. Herbert
  • Publisher :Unknown
  • Release Date :2003-09-12
  • Total pages :576
  • ISBN : 9780470864975
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Summary : Electroceramics, Materials, Properties, Applications, Second Edition provides a comprehensive treatment of the many aspects of ceramics and their electrical applications. The fundamentals of how electroceramics function are carefully introduced with their properties and applications also considered. Starting from elementary principles, the physical, chemical and mathematical background of the subject are discussed and wherever appropriate, a strong emphasis is placed on the relationship between microstructire and properties. The Second Edition has been fully revised and updated, building on the foundation of the earlier book to provide a concise text for all those working in the growing field of electroceramics. fully revised and updated to include the latest technological changes and developments in the field includes end of chapter problems and an extensive bibliography an Invaluable text for all Materials Science students. a useful reference for physicists, chemists and engineers involved in the area of electroceramics.

Ferroelectric Materials and Their Applications

Ferroelectric Materials and Their Applications
  • Author : Y. Xu
  • Publisher :Unknown
  • Release Date :2013-10-22
  • Total pages :406
  • ISBN : 9781483290959
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Summary : This book presents the basic physical properties, structure, fabrication methods and applications of ferroelectric materials. These are widely used in various devices, such as piezoelectric/electrostrictive transducers and actuators, pyroelectric infrared detectors, optical integrated circuits, optical data storage, display devices, etc. The ferroelectric materials described in this book include a relatively complete list of practical and promising ferroelectric single crystals, bulk ceramics and thin films. Included are perovskite-type, lithium niobate, tungsten-bronze-type, water-soluable crystals and other inorganic materials, as well as organic ferroelectrics (polymers, liquid crystals, and composites). Basic concepts, principles and methods for the physical property characteristics of ferroelectric materials are introduced in the first two chapters for those readers new to the subject of ferroelectricity. Not only professional researchers and engineers but also students and other readers who have limited physical knowledge and an interest in ferroelectrics, will welcome this book.

Resistive Random Access Memory (RRAM)

Resistive Random Access Memory (RRAM)
  • Author : Shimeng Yu
  • Publisher :Unknown
  • Release Date :2016-03-18
  • Total pages :79
  • ISBN : 9781627059305
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Summary : RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.

The Future of Semiconductor Oxides in Next-Generation Solar Cells

The Future of Semiconductor Oxides in Next-Generation Solar Cells
  • Author : Monica Lira-Cantu
  • Publisher :Unknown
  • Release Date :2017-09-19
  • Total pages :566
  • ISBN : 9780128109960
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Summary : The Future of Semiconductor Oxides in Next-Generation Solar Cells begins with several chapters covering the synthesis of semiconductor oxides for NGSCs. Part II goes on to cover the types and applications of NGSCs currently under development, while Part III brings the two together, covering specific processing techniques for NGSC construction. Finally, Part IV discusses the stability of SO solar cells compared to organic solar cells, and the possibilities offered by hybrid technologies. This comprehensive book is an essential reference for all those academics and professionals who require thorough knowledge of recent and future developments in the role of semiconductor oxides in next generation solar cells. Unlocks the potential of advanced semiconductor oxides to transform Next Generation Solar Cell (NGSC) design Full coverage of new developments and recent research make this essential reading for researchers and engineers alike Explains the synthesis and processing of semiconductor oxides with a view to their use in NGSCs

Frontiers of Materials Research

Frontiers of Materials Research
  • Author : National Academies of Sciences, Engineering, and Medicine,Division on Engineering and Physical Sciences,Board on Physics and Astronomy,National Materials and Manufacturing Board,Committee on Frontiers of Materials Research: A Decadal Survey
  • Publisher :Unknown
  • Release Date :2019-09-12
  • Total pages :294
  • ISBN : 9780309483872
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Summary : Modern materials science builds on knowledge from physics, chemistry, biology, mathematics, computer and data science, and engineering sciences to enable us to understand, control, and expand the material world. Although it is anchored in inquiry-based fundamental science, materials research is strongly focused on discovering and producing reliable and economically viable materials, from super alloys to polymer composites, that are used in a vast array of products essential to today's societies and economies. Frontiers of Materials Research: A Decadal Survey is aimed at documenting the status and promising future directions of materials research in the United States in the context of similar efforts worldwide. This third decadal survey in materials research reviews the progress and achievements in materials research and changes in the materials research landscape over the last decade; research opportunities for investment for the period 2020-2030; impacts that materials research has had and is expected to have on emerging technologies, national needs, and science; and challenges the enterprise may face over the next decade.

High k Gate Dielectrics

High k Gate Dielectrics
  • Author : Michel Houssa
  • Publisher :Unknown
  • Release Date :2003-12-01
  • Total pages :614
  • ISBN : 9781420034141
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Summary : The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ

Ceramic Abstracts

Ceramic Abstracts
  • Author : American Ceramic Society
  • Publisher :Unknown
  • Release Date :1997
  • Total pages :229
  • ISBN : CORNELL:31924077913295
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Summary :