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Emerging Non-Volatile Memories

Emerging Non-Volatile Memories
  • Author : Seungbum Hong,Orlando Auciello,Dirk Wouters
  • Publisher :Unknown
  • Release Date :2014-11-18
  • Total pages :273
  • ISBN : 9781489975379
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Summary : This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

Emerging Non-volatile Memory Technologies

Emerging Non-volatile Memory Technologies
  • Author : Wen Siang Lew,Gerard Joseph Lim,Putu Andhita Dananjaya
  • Publisher :Unknown
  • Release Date :2021-01-09
  • Total pages :438
  • ISBN : 9789811569128
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Summary : This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.

Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
  • Author : Yoshio Nishi
  • Publisher :Unknown
  • Release Date :2014-06-24
  • Total pages :532
  • ISBN : 9780857098092
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Summary : New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
  • Author : Yoshio Nishi,Blanka Magyari-Kope
  • Publisher :Unknown
  • Release Date :2019-06-15
  • Total pages :662
  • ISBN : 9780081025857
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Summary : Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory

Charge-Trapping Non-Volatile Memories

Charge-Trapping Non-Volatile Memories
  • Author : Panagiotis Dimitrakis
  • Publisher :Unknown
  • Release Date :2017-02-14
  • Total pages :211
  • ISBN : 9783319487052
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Summary : This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing
  • Author : Su-Ting Han,Ye Zhou
  • Publisher :Unknown
  • Release Date :2020-05-26
  • Total pages :352
  • ISBN : 9780128226063
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Summary : Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies. This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies

Silicon Non-Volatile Memories

Silicon Non-Volatile Memories
  • Author : Barbara de Salvo
  • Publisher :Unknown
  • Release Date :2013-05-10
  • Total pages :256
  • ISBN : 9781118617809
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Summary : This book provides a comprehensive overview of the differenttechnological approaches currently being studied to fulfill futurememory requirements. Two main research paths are identified anddiscussed. Different “evolutionary paths” based on newmaterials and new transistor structures are investigated to extendclassical floating gate technology to the 32 nm node.“Disruptive paths” are also covered, addressing 22 nmand smaller IC generations. Finally, the main factors at the originof these phenomena are identified and analyzed, providing pointerson future research activities and developments in this area.

Non-volatile Memories

Non-volatile Memories
  • Author : Pierre-Camille Lacaze,Jean-Claude Lacroix
  • Publisher :Unknown
  • Release Date :2014-12-15
  • Total pages :286
  • ISBN : 9781848216235
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Summary : Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

Memoirs of the Institute of Scientific and Industrial Research, Osaka University

Memoirs of the Institute of Scientific and Industrial Research, Osaka University
  • Author : Ōsaka Daigaku. Sangyō Kagaku Kenkyūjo
  • Publisher :Unknown
  • Release Date :2011
  • Total pages :229
  • ISBN : UCBK:C105013399
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Summary :

Resistive switching in ZrO2 based metal-oxide-metal structures

Resistive switching in ZrO2 based metal-oxide-metal structures
  • Author : Irina Kärkkänen
  • Publisher :Unknown
  • Release Date :2014
  • Total pages :125
  • ISBN : 9783893369713
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Summary :

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10

Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
  • Author : R. Ekwal Sah
  • Publisher :Unknown
  • Release Date :2009-05
  • Total pages :857
  • ISBN : 9781566777100
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Summary : The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.

The Journal of the Korean Physical Society

The Journal of the Korean Physical Society
  • Author : Anonim
  • Publisher :Unknown
  • Release Date :2008
  • Total pages :229
  • ISBN : CHI:82281454
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Summary :

Emerging Nanoelectronic Devices

Emerging Nanoelectronic Devices
  • Author : An Chen,James Hutchby,Victor Zhirnov,George Bourianoff
  • Publisher :Unknown
  • Release Date :2015-01-27
  • Total pages :576
  • ISBN : 9781118447741
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Summary : Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. Suggests guidelines for the directions of future development of each technology. Emphasizes physical concepts over mathematical development. Provides an essential resource for students, researchers and practicing engineers.

Oxide Reliability

Oxide Reliability
  • Author : D. J. Dumin
  • Publisher :Unknown
  • Release Date :2002
  • Total pages :270
  • ISBN : 9810248423
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Summary : Presents in summary the state of our knowledge of oxide reliability.

6th Forum on New Materials -

6th Forum on New Materials -
  • Author : Pietro Vincenzini
  • Publisher :Unknown
  • Release Date :2014-10-31
  • Total pages :220
  • ISBN : 9783038266921
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Summary : Collection of selected, peer reviewed papers from the 6th Forum on New Materials, part of CIMTEC 2014-13th International Ceramics Congress and 6th Forum on New Materials, June 15-19, 2014, Montecatini Terme, Italy. The 32 papers are grouped as follows: Chapter 1: Novel Functional Carbon Nanomaterials, Chapter 2: Transport in Inorganic Materials, Chapter 3: Non-Volatile Inorganic Memory Devices, Chapter 4: Novel Superconducting Materials.

Materials for Information Technology

Materials for Information Technology
  • Author : Ehrenfried Zschech,Caroline Whelan,Thomas Mikolajick
  • Publisher :Unknown
  • Release Date :2006-07-02
  • Total pages :508
  • ISBN : 9781846282355
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Summary : This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.

Resistive Switching

Resistive Switching
  • Author : Daniele Ielmini,Rainer Waser
  • Publisher :Unknown
  • Release Date :2015-12-28
  • Total pages :784
  • ISBN : 9783527680948
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Summary : With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.

Thin Film Metal-Oxides

Thin Film Metal-Oxides
  • Author : Shriram Ramanathan
  • Publisher :Unknown
  • Release Date :2009-12-03
  • Total pages :337
  • ISBN : 1441906649
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Summary : Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.

Diffusion and Defect Data

Diffusion and Defect Data
  • Author : Marc Heyns,Paul Mertens,Marc Meuris
  • Publisher :Unknown
  • Release Date :2001
  • Total pages :321
  • ISBN : 3908450578
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Summary :

Resistive Random Access Memory (RRAM)

Resistive Random Access Memory (RRAM)
  • Author : Shimeng Yu
  • Publisher :Unknown
  • Release Date :2016-03-18
  • Total pages :79
  • ISBN : 9781627059305
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Summary : RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.

Nonvolatile Semiconductor Memory Technology

Nonvolatile Semiconductor Memory Technology
  • Author : W. D. Brown,William D. Brown,Joe Brewer
  • Publisher :Unknown
  • Release Date :1998
  • Total pages :589
  • ISBN : UOM:39015049618690
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Summary : This comprehensive reference book provides electronics engineers with the technical data and perspective necessary for the intelligent selection, specification, and application of nonvolatile semiconductor memory devices. A "one-stop shopping" tool for the working engineer, this book presents the fundamental aspects of nonvolatile semiconductor memory technologies, devices, reliability, and applications.