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Nanomaterials-Based Charge Trapping Memory Devices

Nanomaterials-Based Charge Trapping Memory Devices
  • Author : Ammar Nayfeh,Nazek El-Atab
  • Publisher :Unknown
  • Release Date :2020-05-27
  • Total pages :192
  • ISBN : 9780128223437
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Summary : Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices. Explores in depth memory device operation, requirements and challenges Presents fabrication methods and characterization results of new nanomaterials using techniques, including laser ablation of nanoparticles, ALD growth of nano-islands, and agglomeration-based technique of nanoparticles Demonstrates how nanomaterials affect the performance of memory devices

Charge-Trapping Non-Volatile Memories

Charge-Trapping Non-Volatile Memories
  • Author : Panagiotis Dimitrakis
  • Publisher :Unknown
  • Release Date :2017-02-14
  • Total pages :211
  • ISBN : 9783319487052
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Summary : This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.

State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS 56)

State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS 56)
  • Author : J.-H. He,C. O'Dwyer,F. Ren,C. Jagadish,Y.-L. Chueh
  • Publisher :Unknown
  • Release Date :2014
  • Total pages :75
  • ISBN : 9781607685548
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Summary :

Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
  • Author : Yoshio Nishi
  • Publisher :Unknown
  • Release Date :2014-06-24
  • Total pages :532
  • ISBN : 9780857098092
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Summary : New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)

3D Stacked Chips

3D Stacked Chips
  • Author : Ibrahim (Abe) M. Elfadel,Gerhard Fettweis
  • Publisher :Unknown
  • Release Date :2016-05-11
  • Total pages :339
  • ISBN : 9783319204819
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Summary : This book explains for readers how 3D chip stacks promise to increase the level of on-chip integration, and to design new heterogeneous semiconductor devices that combine chips of different integration technologies (incl. sensors) in a single package of the smallest possible size. The authors focus on heterogeneous 3D integration, addressing some of the most important challenges in this emerging technology, including contactless, optics-based, and carbon-nanotube-based 3D integration, as well as signal-integrity and thermal management issues in copper-based 3D integration. Coverage also includes the 3D heterogeneous integration of power sources, photonic devices, and non-volatile memories based on new materials systems.

Electrical Memory Materials and Devices

Electrical Memory Materials and Devices
  • Author : Wen-Chang Chen
  • Publisher :Unknown
  • Release Date :2015-10-21
  • Total pages :408
  • ISBN : 9781782621164
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Summary :

Comprehensive Nanoscience and Technology

Comprehensive Nanoscience and Technology
  • Author : Anonim
  • Publisher :Unknown
  • Release Date :2010-10-29
  • Total pages :2774
  • ISBN : 0123743966
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Summary : From the Introduction: Nanotechnology and its underpinning sciences are progressing with unprecedented rapidity. With technical advances in a variety of nanoscale fabrication and manipulation technologies, the whole topical area is maturing into a vibrant field that is generating new scientific research and a burgeoning range of commercial applications, with an annual market already at the trillion dollar threshold. The means of fabricating and controlling matter on the nanoscale afford striking and unprecedented opportunities to exploit a variety of exotic phenomena such as quantum, nanophotonic and nanoelectromechanical effects. Moreover, researchers are elucidating new perspectives on the electronic and optical properties of matter because of the way that nanoscale materials bridge the disparate theories describing molecules and bulk matter. Surface phenomena also gain a greatly increased significance; even the well-known link between chemical reactivity and surface-to-volume ratio becomes a major determinant of physical properties, when it operates over nanoscale dimensions. Against this background, this comprehensive work is designed to address the need for a dynamic, authoritative and readily accessible source of information, capturing the full breadth of the subject. Its six volumes, covering a broad spectrum of disciplines including material sciences, chemistry, physics and life sciences, have been written and edited by an outstanding team of international experts. Addressing an extensive, cross-disciplinary audience, each chapter aims to cover key developments in a scholarly, readable and critical style, providing an indispensible first point of entry to the literature for scientists and technologists from interdisciplinary fields. The work focuses on the major classes of nanomaterials in terms of their synthesis, structure and applications, reviewing nanomaterials and their respective technologies in well-structured and comprehensive articles with extensive cross-references. It has been a constant surprise and delight to have found, amongst the rapidly escalating number who work in nanoscience and technology, so many highly esteemed authors willing to contribute. Sharing our anticipation of a major addition to the literature, they have also captured the excitement of the field itself in each carefully crafted chapter. Along with our painstaking and meticulous volume editors, full credit for the success of this enterprise must go to these individuals, together with our thanks for (largely) adhering to the given deadlines. Lastly, we record our sincere thanks and appreciation for the skills and professionalism of the numerous Elsevier staff who have been involved in this project, notably Fiona Geraghty, Megan Palmer and Greg Harris, and especially Donna De Weerd-Wilson who has steered it through from its inception. We have greatly enjoyed working with them all, as we have with each other.

Journal of Nanoscience and Nanotechnology

Journal of Nanoscience and Nanotechnology
  • Author : Anonim
  • Publisher :Unknown
  • Release Date :2007
  • Total pages :229
  • ISBN : UOM:39015039859551
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Summary :

Flash Memories

Flash Memories
  • Author : Paulo Cappelletti,Carla Golla,Piero Olivo,Enrico Zanoni
  • Publisher :Unknown
  • Release Date :2013-11-27
  • Total pages :540
  • ISBN : 9781461550150
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Summary : A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].

JJAP Letters

JJAP Letters
  • Author : Anonim
  • Publisher :Unknown
  • Release Date :2007
  • Total pages :229
  • ISBN : UCAL:C2575444
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Summary :

Chinese Physics Letters

Chinese Physics Letters
  • Author : Anonim
  • Publisher :Unknown
  • Release Date :2007
  • Total pages :229
  • ISBN : CHI:81575128
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Summary :

Nanocrystals in Nonvolatile Memory

Nanocrystals in Nonvolatile Memory
  • Author : Writam Banerjee
  • Publisher :Unknown
  • Release Date :2018-10-09
  • Total pages :534
  • ISBN : 9781351203258
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Summary : In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.

3D Flash Memories

3D Flash Memories
  • Author : Rino Micheloni
  • Publisher :Unknown
  • Release Date :2016-05-26
  • Total pages :380
  • ISBN : 9789401775120
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Summary : This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.

Nanoscale Silicon-oxide-nitride-oxide-silicon (SONOS) Memories and Other Charge Trapping Devices

Nanoscale Silicon-oxide-nitride-oxide-silicon (SONOS) Memories and Other Charge Trapping Devices
  • Author : Moon Kyung Kim
  • Publisher :Unknown
  • Release Date :2007
  • Total pages :312
  • ISBN : CORNELL:31924108522560
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Summary : The SONOS device with the smallest dimension in the gate width/length and the ONO thickness has been demonstrated. It has acceptable memory characteristics in retention time, high-speed program and low-power operation necessary for nonvolatile applications.

Emerging Nanoelectronic Devices

Emerging Nanoelectronic Devices
  • Author : An Chen,James Hutchby,Victor Zhirnov,George Bourianoff
  • Publisher :Unknown
  • Release Date :2014-11-26
  • Total pages :576
  • ISBN : 9781118958278
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Summary : Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.

BioMEMS and Nanotechnology

BioMEMS and Nanotechnology
  • Author : Anonim
  • Publisher :Unknown
  • Release Date :2003
  • Total pages :229
  • ISBN : UOM:39015058702542
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Summary :

IEEE Circuits & Devices

IEEE Circuits & Devices
  • Author : Anonim
  • Publisher :Unknown
  • Release Date :2006
  • Total pages :229
  • ISBN : UCSD:31822036012003
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Summary :

Emerging Resistive Switching Memories

Emerging Resistive Switching Memories
  • Author : Jianyong Ouyang
  • Publisher :Unknown
  • Release Date :2016-07-04
  • Total pages :93
  • ISBN : 9783319315720
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Summary : This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.

Electronics and Information Technology Annual Report

Electronics and Information Technology Annual Report
  • Author : India. Department of Electronics and Information Technology
  • Publisher :Unknown
  • Release Date :2011
  • Total pages :229
  • ISBN : MINN:31951D03478517S
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Summary :

Proceedings of the ... IEEE Conference on Nanotechnology

Proceedings of the ... IEEE Conference on Nanotechnology
  • Author : Anonim
  • Publisher :Unknown
  • Release Date :2004
  • Total pages :229
  • ISBN : UIUC:30112061322936
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Summary :

Memristor and Memristive Neural Networks

Memristor and Memristive Neural Networks
  • Author : Alex James
  • Publisher :Unknown
  • Release Date :2018-04-04
  • Total pages :324
  • ISBN : 9789535139478
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Summary : This book covers a range of models, circuits and systems built with memristor devices and networks in applications to neural networks. It is divided into three parts: (1) Devices, (2) Models and (3) Applications. The resistive switching property is an important aspect of the memristors, and there are several designs of this discussed in this book, such as in metal oxide/organic semiconductor nonvolatile memories, nanoscale switching and degradation of resistive random access memory and graphene oxide-based memristor. The modelling of the memristors is required to ensure that the devices can be put to use and improve emerging application. In this book, various memristor models are discussed, from a mathematical framework to implementations in SPICE and verilog, that will be useful for the practitioners and researchers to get a grounding on the topic. The applications of the memristor models in various neuromorphic networks are discussed covering various neural network models, implementations in A/D converter and hierarchical temporal memories.