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• Author : Zeev Zalevsky,Pavel Livshits,Eran Gur
• Publisher :Unknown
• Release Date :2013-11-13
• Total pages :110
• ISBN : 9780128000175

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Summary : New Approaches to Image Processing Based Failure Analysis of Nano-Scale ULSI Devices introduces the reader to transmission and scanning microscope image processing for metal and non-metallic microstructures. Engineers and scientists face the pressing problem in ULSI development and quality assurance: microscopy methods can’t keep pace with the continuous shrinking of feature size in microelectronics. Nanometer scale sizes are below the resolution of light, and imaging these features is nearly impossible even with electron microscopes, due to image noise. This book presents novel "smart" image processing methods, applications, and case studies concerning quality improvement of microscope images of microelectronic chips and process optimization. It explains an approach for high-resolution imaging of advanced metallization for micro- and nanoelectronics. This approach obviates the time-consuming preparation and selection of microscope measurement and sample conditions, enabling not only better electron-microscopic resolution, but also more efficient testing and quality control. This in turn leads to productivity gains in design and development of nano-scale ULSI chips. The authors also present several approaches for super-resolving low-resolution images to improve failure analysis of microelectronic chips. Acquaints users with new software-based approaches to enhance high-resolution microscope imaging of microchip structures Demonstrates how these methods lead to productivity gains in the development of ULSI chips Presents several techniques for the superresolution of images, enabling engineers and scientists to improve their results in failure analysis of microelectronic chips

• Author : Markku Tilli,Mervi Paulasto-Krockel,Teruaki Motooka,Veikko Lindroos
• Publisher :Unknown
• Release Date :2015-09-02
• Total pages :826
• ISBN : 9780323312233

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Summary : The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs Discusses properties, preparation, and growth of silicon crystals and wafers Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures Geared towards practical applications rather than theory

• Author : David G. Seiler,Alain C. Diebold,Robert McDonald,Caroline R. Ayre,Rajinder P. Khosla,Stefan Zollner,Erik M. Secula
• Publisher :Unknown
• Release Date :2005-09-29
• Total pages :667
• ISBN : UOM:39015069190943

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Summary : The worldwide semiconductor community faces increasingly difficult challenges in the era of silicon nanotechnology and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continuing the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The book also covers emerging nano-devices and the corresponding metrology challenges that arise.

• Author : Anonim
• Publisher :Unknown
• Release Date :1998
• Total pages :229
• ISBN : STANFORD:36105021108332

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Summary :

• Author : Anonim
• Publisher :Unknown
• Release Date :1998
• Total pages :229
• ISBN : UOM:39015046529585

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• Author : Anonim
• Publisher :Unknown
• Release Date :1998
• Total pages :229
• ISBN : UVA:X006047308

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• Author : Anonim
• Publisher :Unknown
• Release Date :1997
• Total pages :229
• ISBN : OSU:32435059589259

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• Author : Anonim
• Publisher :Unknown
• Release Date :1996
• Total pages :229
• ISBN : UOM:39015048722782

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Summary :

• Author : David G. Seiler,Alain C. Diebold,Thomas J. Shaffner,Robert McDonald,Stefan Zollner,Rajinder P. Khosla,Eric M. Secula
• Publisher :Unknown
• Release Date :2003-10-08
• Total pages :818
• ISBN : UOM:39015052982736

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Summary : The worldwide semiconductor community faces increasingly difficult challenges as it moves into the manufacturing of chips with feature sizes approaching 100 nm and beyond. The magnitude of these challenges demands special attention from the metrology and analytical measurements community. New paradigms must be found. Adequate research and development for new metrology concepts are urgently needed. Topics include: integrated circuit history, challenges and overviews, front end, lithography, interconnect and back end, and critical analytical techniques. Characterization and metrology are key enablers for developing new semiconductor technology and in improving manufacturing. This book summarizes major issues and gives critical reviews of important measurement techniques that are crucial to continue the advances in semiconductor technology. It covers major aspects of process technology and most characterization techniques for silicon research, including development, manufacturing, and diagnostics. The editors believe that this book of collected papers provides a concise and effective portrayal of industry characterization needs and the way they are being addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. Hopefully, it will also provide a basis for stimulating advances in metrology and new ideas for research and development.

• Author : Anonim
• Publisher :Unknown
• Release Date :1994
• Total pages :229
• ISBN : UOM:39015027845208

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• Author : Electrochemical Society
• Publisher :Unknown
• Release Date :1990
• Total pages :229
• ISBN : UCSD:31822006825194

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• Author : Felix M. Gradstein,James G. Ogg,Mark D. Schmitz,Gabi M. Ogg
• Publisher :Unknown
• Release Date :2020
• Total pages :1300
• ISBN : 9780128243619

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Summary : Geologic Time Scale 2020 (2 volume set) contains contributions from 80+ leading scientists who present syntheses in an easy-to-understand format that includes numerous color charts, maps and photographs. In addition to detailed overviews of chronostratigraphy, evolution, geochemistry, sequence stratigraphy and planetary geology, the GTS2020 volumes have separate chapters on each geologic period with compilations of the history of divisions, the current GSSPs (global boundary stratotypes), detailed bio-geochem-sequence correlation charts, and derivation of the age models. The authors are on the forefront of chronostratigraphic research and initiatives surrounding the creation of an international geologic time scale. The included charts display the most up-to-date, international standard as ratified by the International Commission on Stratigraphy and the International Union of Geological Sciences. As the framework for deciphering the history of our planet Earth, this book is essential for practicing Earth Scientists and academics. • Completely updated geologic time scale • Provides the most detailed integrated geologic time scale available that compiles and synthesize information in one reference • Gives insights on the construction, strengths and limitations of the geological time scale that greatly enhances its function and its utility

• Author : Anonim
• Publisher :Unknown
• Release Date :2004
• Total pages :229
• ISBN : UOM:39015057953377

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• Author : Anonim
• Publisher :Unknown
• Release Date :2005
• Total pages :229
• ISBN : UOM:39015062539302

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• Author : Anonim
• Publisher :Unknown
• Release Date :2002
• Total pages :229
• ISBN : UOM:39015086908137

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• Author : Tejinder Gandhi
• Publisher :Unknown
• Release Date :2019-11-01
• Total pages :750
• ISBN : 9781627082464

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Summary : The Electronic Device Failure Analysis Society proudly announces the Seventh Edition of the Microelectronics Failure Analysis Desk Reference, published by ASM International. The new edition will help engineers improve their ability to verify, isolate, uncover, and identify the root cause of failures. Prepared by a team of experts, this updated reference offers the latest information on advanced failure analysis tools and techniques, illustrated with numerous real-life examples. This book is geared to practicing engineers and for studies in the major area of power plant engineering. For non-metallurgists, a chapter has been devoted to the basics of material science, metallurgy of steels, heat treatment, and structure-property correlation. A chapter on materials for boiler tubes covers composition and application of different grades of steels and high temperature alloys currently in use as boiler tubes and future materials to be used in supercritical, ultra-supercritical and advanced ultra-supercritical thermal power plants. A comprehensive discussion on different mechanisms of boiler tube failure is the heart of the book. Additional chapters detailing the role of advanced material characterization techniques in failure investigation and the role of water chemistry in tube failures are key contributions to the book.

• Author : Peterson's Guides Staff,Peterson's Guides
• Publisher :Unknown
• Release Date :2006-11
• Total pages :1135
• ISBN : 0768921562

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Summary : Provides information about admission, financial aid, programs and institutions, and research specialties within the fields of engineering and applied sciences, including civil engineering, information technology, and bioengineering.

• Author : Anonim
• Publisher :Unknown
• Release Date :1995
• Total pages :229
• ISBN : OSU:32435053871380

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• Author : Anonim
• Publisher :Unknown
• Release Date :1999
• Total pages :229
• ISBN : UOM:39015048137098

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Summary :

• Author : Chih-Hang Tung,George T. T. Sheng,Chih-Yuan Lu
• Publisher :Unknown
• Release Date :2003-10-06
• Total pages :680
• ISBN : 0471457728

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Summary : More than 1,100 TEM images illustrate the science of ULSI The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems. The first book available on the subject to be illustrated using TEM images, ULSI Semiconductor Technology Atlas is logically divided into four parts: * Part I includes basic introductions to the ULSI process, device construction analysis, and TEM sample preparation * Part II focuses on key ULSI modules--ion implantation and defects, dielectrics and isolation structures, silicides/salicides, and metallization * Part III examines integrated devices, including complete planar DRAM, stacked cell DRAM, and trench cell DRAM, as well as SRAM as examples for process integration and development * Part IV emphasizes special applications, including TEM in advanced failure analysis, TEM in advanced packaging development and UBM (Under Bump Metallization) studies, and high-resolution TEM in microelectronics This innovative guide also provides engineers and managers in the microelectronics industry, as well as graduate students, with: * More than 1,100 TEM images to illustrate the science of ULSI * A historical introduction to the technology as well as coverage of the evolution of basic ULSI process problems and issues * Discussion of TEM in other advanced microelectronics devices and materials, such as flash memories, SOI, SiGe devices, MEMS, and CD-ROMs

• Author : Yosi Shacham-Diamand,Tetsuya Osaka,Madhav Datta,Takayuki Ohba
• Publisher :Unknown
• Release Date :2009-09-19
• Total pages :552
• ISBN : 0387958681

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Summary : In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.