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• Author : B. Jayant Baliga
• Publisher :Unknown
• Release Date :2018-10-17
• Total pages :418
• ISBN : 9780081023075

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Summary : Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

• Author : Singisetti Uttam,Razzak Towhidur,Zhang Yuewei
• Publisher :Unknown
• Release Date :2019-12-10
• Total pages :260
• ISBN : 9789811216497

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Summary : With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond.

• Author : Fei Wang,Zheyu Zhang,Edward A. Jones
• Publisher :Unknown
• Release Date :2018-11-10
• Total pages :347
• ISBN : 9781785614910

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Summary : Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization. It provides essential tools to assist researchers, advanced students and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications, and includes examples of applying the described methodology.

• Author : Katsuaki Suganuma
• Publisher :Unknown
• Release Date :2018-05-28
• Total pages :240
• ISBN : 9780081020951

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Summary : Wide Bandgap Power Semiconductor Packaging: Materials, Components, and Reliability addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration. As wide bandgap (WBG) power semiconductors, SiC and GaN, are the latest promising electric conversion devices because of their excellent features, such as high breakdown voltage, high frequency capability, and high heat-resistance beyond 200 C, this book is a timely resource on the topic. Examines the key challenges of wide bandgap power semiconductor packaging at various levels, including materials, components and device performance Provides the latest research on potential solutions, with an eye towards the end goal of system integration Discusses key problems, such as thermal management, noise reduction, challenges in interconnects and substrates

• Author : Fan Ren,Stephen J. Pearton
• Publisher :Unknown
• Release Date :2020-09-30
• Total pages :586
• ISBN : 0750325143

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Summary : This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers provide reviews on the latest development of materials and devices in these systems.

• Author : Jung-Hun Seo
• Publisher :Unknown
• Release Date :2019-04-25
• Total pages :138
• ISBN : 9783038978428

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Summary : While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.

• Author : Yogesh Kumar Sharma
• Publisher :Unknown
• Release Date :2018-09-12
• Total pages :152
• ISBN : 9781789236682

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Summary : SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

• Author : Kiyoshi Takahashi,Akihiko Yoshikawa,Adarsh Sandhu
• Publisher :Unknown
• Release Date :2007-04-12
• Total pages :460
• ISBN : 9783540472353

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Summary : This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

• Author : Meiyong Liao,Bo Shen,Zhanguo Wang
• Publisher :Unknown
• Release Date :2019-06-18
• Total pages :503
• ISBN : 9780128172568

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Summary : Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

• Author : Yue Hao,Jin Feng Zhang,Jin Cheng Zhang
• Publisher :Unknown
• Release Date :2016-11-03
• Total pages :368
• ISBN : 9781315351834

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Summary : This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

• Author : Fan Ren,J. C. Zolper
• Publisher :Unknown
• Release Date :2003
• Total pages :514
• ISBN : 9789812382467

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Summary : Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

• Author : B Jayant Baliga
• Publisher :Unknown
• Release Date :2016-12-12
• Total pages :592
• ISBN : 9789813109421

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Summary : During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

• Author : Pushpakaran Bejoy N,Bayne Stephen B
• Publisher :Unknown
• Release Date :2019-03-25
• Total pages :464
• ISBN : 9789813237841

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Summary : The primary goal of this book is to provide a sound understanding of wide bandgap Silicon Carbide (SiC) power semiconductor device simulation using Silvaco© ATLAS Technology Computer Aided Design (TCAD) software. Physics-based TCAD modeling of SiC power devices can be extremely challenging due to the wide bandgap of the semiconductor material. The material presented in this book aims to shorten the learning curve required to start successful SiC device simulation by providing a detailed explanation of simulation code and the impact of various modeling and simulation parameters on the simulation results. Non-isothermal simulation to predict heat dissipation and lattice temperature rise in a SiC device structure under switching condition has been explained in detail. Key pointers including runtime error messages, code debugging, implications of using certain models and parameter values, and other factors beneficial to device simulation are provided based on the authors' experience while simulating SiC device structures. This book is useful for students, researchers, and semiconductor professionals working in the area of SiC semiconductor technology. Readers will be provided with the source code of several fully functional simulation programs that illustrate the use of Silvaco© ATLAS to simulate SiC power device structure, as well as supplementary material for download.

• Author : V. Chakrapani,S. Calabrese Barton,J. Zavada,S. Jang,T. Anderson,J. Hite
• Publisher :Unknown
• Release Date :2017
• Total pages :172
• ISBN : 9781607688099

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Summary :

• Author : Steven Denbaars,John Palmour,Michael Shur,Michael Spencer
• Publisher :Unknown
• Release Date :1998-09-01
• Total pages :586
• ISBN : 1558994181

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Summary : Wide-bandgap semiconductors have a long and illustrious history, starting with the first paper on SiC light-emitting diodes published in 1907. Since then, interest in wide-bandgap semiconductors has skyrocketed. Improved material quality, important breakthroughs both in SiC and GaN technologies, and the emergence of blue GaN-based lasers, have stimulated this progress. To provide a fairly complete picture of this important field, most of the work presented at the conference is included in the volume. In addition, invited papers present an excellent overview of the current state of the art and offer projections for future developments. Topics include: GaN materials and devices; crystal growth; SiC materials and devices; characterization of wide-bandgap semiconductors; and processing characterization and properties of wide-bandgap materials.

• Author : Ricardo Albarracín Sánchez
• Publisher :Unknown
• Release Date :2018-10-17
• Total pages :214
• ISBN : 9781789237689

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Summary : Around 80% of electrical consumption in an industrialised society is used by machinery and electrical drives. Therefore, it is key to have reliable grids that feed these electrical assets. Consequently, it is necessary to carry out pre-commissioning tests of their insulation systems and, in some cases, to implement an online condition monitoring and trending analysis of key variables, such as partial discharges and temperature, among others. Because the tests carried out for analysing the dielectric behaviour of insulation systems are commonly standardised, it is of interest to have tools that simulate the real behaviour of those and their weaknesses to prevent electrical breakdowns. The aim of this book is to provide the reader with models for electrical insulation systems diagnosis.

• Author : Bimal K. Bose
• Publisher :Unknown
• Release Date :2020-11-25
• Total pages :1108
• ISBN : 9780128238677

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Summary : Power Electronics and Motor Drives: Advances and Trends, Second Edition is the perfect resource to keep the electrical engineer up-to-speed on the latest advancements in technologies, equipment and applications. Carefully structured to include both traditional topics for entry-level and more advanced applications for the experienced engineer, this reference sheds light on the rapidly growing field of power electronic operations. New content covers converters, machine models and new control methods such as fuzzy logic and neural network control. This reference will help engineers further understand recent technologies and gain practical understanding with its inclusion of many industrial applications. Further supported by a glossary per chapter, this book gives engineers and researchers a critical reference to learn from real-world examples and make future decisions on power electronic technology and applications. Provides many practical examples of industrial applications Updates on the newest electronic topics with content added on fuzzy logic and neural networks Presents information from an expert with decades of research and industrial experience

• Author : Samuel Vasconcelos Araújo
• Publisher :Unknown
• Release Date :2013-06-13
• Total pages :236
• ISBN : 9783862194865

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Summary :

• Author : Satoshi Koizumi,Hitoshi Umezawa,Julien Pernot,Mariko Suzuki
• Publisher :Unknown
• Release Date :2018-06-29
• Total pages :466
• ISBN : 9780081021842

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Summary : Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance Examines why diamond semiconductors could lead to superior power electronics Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

• Author : Kazuhiro Mochizuki
• Publisher :Unknown
• Release Date :2018-04-30
• Total pages :308
• ISBN : 9781630814298

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Summary : This unique new resource provides a comparative introduction to vertical Gallium Nitride (GaN) and Silicon Carbide (SiC) power devices using real commercial device data, computer, and physical models. This book uses commercial examples from recent years and presents the design features of various GaN and SiC power components and devices. Vertical verses lateral power semiconductor devices are explored, including those based on wide bandgap materials. The abstract concepts of solid state physics as they relate to solid state devices are explained with particular emphasis on power solid state devices. Details about the effects of photon recycling are presented, including an explanation of the phenomenon of the family tree of photon-recycling. This book offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC. The fabrication process, including ion implantation, diffusion, oxidation, metallization, and passivation is explained. The book provides details about metal-semiconductor contact, unipolar power diodes, and metal-insulator-semiconductor (MIS) capacitors. Bipolar power diodes, power switching devices, and edge terminations are also covered in this resource.

• Author : M Razeghi,Mohamed Henini
• Publisher :Unknown
• Release Date :2004
• Total pages :575
• ISBN : 0080444261

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Summary : Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides